Advancing High‑Voltage Silicon Carbide Schottky Diodes: 5–10 kV Performance Without Stacking
For the past six years ,QUEST and Thermal Component Technologies has been developing next‑generation Silicon Carbide (SiC) High Voltage Schottky Diodes using a homogeneous device architecture. Unlike the industry‑standard MPS (Merged‑PIN Schottky) approach, our technology enables true 5 kV and 10 kV Schottky diodes—devices that are unmatched in performance and voltage capability.
Breaking Through the Packaging Barrier
One of the major challenges in high‑voltage diode development is packaging. Industry‑accepted packages were never designed for single‑die Schottky devices operating at these voltages. Through extensive engineering and HV insulation modelling, we have achieved:
- 5 kV Schottky Diodes Successfully packaged in a through‑hole TO‑247 style package, meeting industry standards for creepage, clearance, and manufacturability.
- 10 kV Schottky Diodes Housed in a custom‑designed high‑voltage power module, manufactured using PEEK (Polyether Ether Ketone) for its exceptional dielectric strength, thermal stability, and mechanical robustness.
These packaging solutions allow our devices to integrate seamlessly into existing power electronics platforms while delivering voltage ratings previously achievable only through stacked-die assemblies.
Why High‑Voltage Schottky Instead of Stacked Devices?
Traditional HV power supplies rely on stacked diode configurations to reach 5–10 kV ratings. While effective, stacking introduces several drawbacks:
- Uneven voltage sharing
- Increased leakage
- Higher switching losses
- Thermal imbalance
- Reduced long‑term reliability
Our single‑die high‑voltage Schottky diodes eliminate these issues entirely.
Efficiency Where It Matters Most
As global copper prices continue to rise, high‑voltage transmission becomes increasingly attractive—particularly in HVDC power systems. Higher voltage means lower current, which directly reduces conductor size and copper usage.
High‑voltage SiC Schottky diodes offer:
- Ultra‑low switching losses
- Minimal reverse recovery
- Higher system efficiency
- Reduced thermal management requirements
- Improved reliability in HVDC and industrial power conversion
These advantages make homogeneous SiC Schottky devices a compelling alternative to stacked diode assemblies, especially in next‑generation high‑efficiency power supplies.
